Manipulation of nuclear spins in QDs using resonant techniques

Pumping of nuclear spins via “dark” exciton states in a quantum dot using arbitrary polarised light (invited talk)

Control of spontaneous emission from InP single quantum dots in GaInP photonic crystal nanocavities

Dynamics of optically induced nuclear spin polarization in individual InP/GaInP quantum dots

Optically tunable nuclear magnetic resonance in a single quantum dot

Pumping of Nuclear Spins by Optical Excitation of Spin-Forbidden Transitions in a Quantum Dot

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum-dot nanoprobe

Voltage-controlled nuclear polarization switching in a single InGaAs quantum dot

Nuclear spin pumping under resonant optical excitation in a quantum dot

Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots

Overhauser effect in individual InP/GaxIn1−xP dots

Overhauser effect in InP/GaInP quantum dots with strong optical anisotropy

Bistability of optically induced nuclear spin orientation in quantum dots

Record high nuclear magnetic field in a 40 nm InP quantum dot

Record high nuclear magnetic field in a 40 nm InP quantum dot,

Nuclear Spin Switch in Semiconductor Quantum Dots

Overhauser effect in InP/GaInP quantum dots with optical anisotropy

Overhauser effect in InP/GaInP quantum dots with strong anisotropy (poster)

Overhauser effect in InP/GaInP quantum dots with strong anisotropy

Lateral Electric Field Devices Comprising Quantum Dots, poster presentation

Exciton fine structure splitting in dot-in-a-well structures

The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface

Energy relaxation of excitonlike polaritons in semiconductor microcavities: Effect on the parametric scattering of polaritons

Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques

Temperature-induced carrier escape processes studied in absorption of individual InGa1As quantum dots