The influence of GaN spacer layer thickness on the optical properties of InGaN/GaN multilayer quantum dot systems
Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures
Time-resolved photoluminescence studies of near surface InGaN/GaN quantum wells with varying GaN cap thickness
Study of the formation and optical properties of InGaN/GaN quantum dots grown on different GaN templates
Time resolved photoluminescence studies of near surface InGaN/GaN quantum wells with varying GaN cap thickness
Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots
Temperature dependent photoluminescence studies of low-density InGaN/GaN self-assembled quantum dot ensembles
1.3µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature
Infrared modulated interlevel spectroscopy of 1.3µm self-assembled quantum dot lasers using a free electron laser
1.3µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
Temperature-induced carrier escape processes studied in absorption of individual InGa1As quantum dots
Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques
Improved performance of 1.3 µm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots
