Infrared modulated interlevel spectroscopy of 1.3µm self-assembled quantum dot lasers using a free electron laser
Improved performance of 1.3 µm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
1.3µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
Engineering carrier confinement potentials in 1.3µm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity
Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate