Time resolved photoluminescence studies of near surface InGaN/GaN quantum wells with varying GaN cap thickness
Time-resolved photoluminescence studies of near surface InGaN/GaN quantum wells with varying GaN cap thickness
Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions
Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments
Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12 µm atmospheric window via rapid thermal annealing
Energy level structure and electron relaxation times in InAs/InxGa1−xAs quantum dot-in-a-well structures
Experimental and theoretical investigation of the spectral Stark shift in quantum dots-in-a-well infrared photodetectors
