Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions
Increasing the dot density in quantum dot infrared photodetectors via antimony mediated dot formation
InGaAs-AlAsSb: the material system of choice for short wavelength quantum cascade lasers? (Invited Paper)
Rapid polaron transfer between non-degenerate excited states in InAs/GaAs self-assembled quantum dots
Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques