Studies of intraband carrier relaxation in self-assembled quantum dots for mid-infrared and terahertz device applications (Invited Paper)
Low threshold current density and negative characteristic temperature 1.3 µm InAs self-assembled quantum dot lasers
Stark shift of the spectral response in quantum dots-in-a-well infrared photodetectors’, Journal of Physics D: Applied Physics
High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers
Observation and Modeling of a Room – Temperature Negative Characteristic Temperature 1.3um p-type Modulation Doped Quantum Dot Laser
