Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments
Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions
Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12 µm atmospheric window via rapid thermal annealing
Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate