The influence of GaN spacer layer thickness on the optical properties of InGaN/GaN multilayer quantum dot systems
Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures
Study of the formation and optical properties of InGaN/GaN quantum dots grown on different GaN templates
Time resolved photoluminescence studies of near surface InGaN/GaN quantum wells with varying GaN cap thickness
Time-resolved photoluminescence studies of near surface InGaN/GaN quantum wells with varying GaN cap thickness
Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots
High-reflectivity Al xGa1-xN/Al yGa1-yN distributed Bragg reflectors with peak wavelength around 350 nm
